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 STP5NK90Z STF5NK90Z
N-channel 900V - 2 - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESHTM MOSFET
General features
Type STP5NK90Z STF5NK90Z VDSS (@Tjmax) 900 V 900 V RDS(on) < 2.5 ID 4.5 A PW 125W 30W
3 1 2
< 2.5 4.5 A(1)
1. Limited only by maximum temperature allowed
Extremely high dv/dt capability Improved esd capability 100% avalanche rated Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-220
TO-220FP
Internal schematic diagram
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
Applications
Switching application
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Order codes
Part number STP5NK90Z STF5NK90Z Marking P5NK90Z F5NK90Z Package TO-220 TO-220FP Packaging Tube Tube
August 2006
Rev 4
1/15
www.st.com 15
Contents
STP5NK90Z - STF5NK90Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 4 5
Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STP5NK90Z - STF5NK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter Value STP5NK90Z STF5NK90Z V V V 4.5 (2) 2.8 (2) 18 (2) 30 0.24 A A Unit
VDS VDGR VGS ID ID IDM (1) PTOT
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor 4.5 2.8 18 125 1
900 900 30
VESD (G-S) dv/dt
(3)
Gate source ESD (HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature
VISO TJ Tstg
1. Pulse width limited by safe operation area
2. Limited only by maximum temperature allowed
3. ISD 4.5 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
Table 2.
Symbol Rthj-case
Thermal data
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Rthj-a Tl
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Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
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4.5
4000
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V V
A
W
W/C
V/ns
2500
-55 to 150 -55 to 150
C C
Value Unit TO-220 1 62.5 300 TO-220FP 4.2 C/W C/W C
Parameter
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Max Value 4.5 230 Unit A mJ
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Electrical ratings
STP5NK90Z - STF5NK90Z
Table 4.
Symbol BVGSO
Gate-source zener diode
Parameter Gate-Source breakdown voltage Test conditions Igs=1mA (Open drain) Min 30 Typ. Max Unit V
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP5NK90Z - STF5NK90Z
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc=125C Min. 900 1 50
10
Typ.
Max.
Unit V A A A V
Gate body leakage current VGS = 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100A VGS = 10 V, ID = 2.25 A 3 3.75 2
4.5 2.5
Table 6.
Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Test conditions
Forward transconductance VDS =15V, ID = 2.25A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance
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1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
ro P e
Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge
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VDS =25V, f=1 MHz, VGS=0
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Min.
Typ. 4.8
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Max.
Unit S pF pF pF pF ns ns ns ns nC nC nC
1160 105 21.5 65.5 27 7.2 52 19 41.5 69 21.9
VGS=0, VDS =0V to 720V VDD=400 V, ID= 2.2 A, RG=4.7, VGS=10V (see Figure 19) VDD=720V, ID = 4.4A VGS =10V (see Figure 18)
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Electrical characteristics
STP5NK90Z - STF5NK90Z
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5A, VGS=0 ISD = 4.5 A, di/dt = 100 A/s VDD = 35 V (see Figure 18) ISD = 4.5 A, di/dt = 100 A/s VDD = 35 V, Tj = 150 C (see Figure 18) 635 5.9 18.5 712 4.66 13.1 Test conditions Min Typ. Max 4.5 18 1.6 Unit A A V ns C A ns C A
1. Pulse width limited by safe operating area
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STP5NK90Z - STF5NK90Z
Electrical characteristics
2. Pulsed: pulse duration=300s, duty cycle 1.5%
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO 220 Figure 2. Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
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Electrical characteristics Figure 5. Output characterisics Figure 6.
STP5NK90Z - STF5NK90Z Transfer characteristics
Figure 7.
Transconductance
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
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STP5NK90Z - STF5NK90Z Figure 11. Normalized gate threshold voltage vs temperature
Electrical characteristics Figure 12. Normalized on resistance vs temperature
Figure 13. Source-drain diode forward characteristics
Figure 14. Avalanche Energy vs starting Tj
Figure 15. Normalized breakdown voltage vs temperature
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Test circuit Package mechanical data
STP5NK90Z - STF5NK90Z
3
Test circuit Package mechanical data
Figure 17. Unclamped inductive wafeform
Figure 16. Unclamped inductive load test circuit
Figure 18. Switching times test circuit for resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load switching and diode recovery times
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STP5NK90Z - STF5NK90Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP5NK90Z - STF5NK90Z
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
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1.204 0.417 0.141 0.645 0.366 0.126
A
B
F1
D
F
F2
L2
L5
123
L4
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G
STP5NK90Z - STF5NK90Z
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551
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Q
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0.151 0.116
0.154
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Revision history
STP5NK90Z - STF5NK90Z
5
Revision history
Table 8.
Date 06-Oct-2004 08-Sep-2005 14-Dec-2005 31-Jul-2005
Revision history
Revision 1 2 3 4 First release Complete datasheet Inserted Ecopack indication New template, no content change Changes
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STP5NK90Z - STF5NK90Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
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ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
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